Resumen
ISO 23812:2009 specifies a procedure for calibrating the depth scale in a shallow region, less than 50 nm deep, in SIMS depth profiling of silicon, using multiple delta-layer reference materials.
It is not applicable to the surface-transient region where the sputtering rate is not in the steady state.
It is applicable to single-crystalline silicon, polycrystalline silicon and amorphous silicon.
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Informaciones generales
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Estado: PublicadoFecha de publicación: 2009-04Etapa: Norma Internacional confirmada [90.93]
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Edición: 1Número de páginas: 19
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Comité Técnico :ISO/TC 201/SC 6ICS :71.040.40
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