ISO 5618-2:2024
2024-04
Resumen
This document describes a method for determining the etch pit density, which is used to detect dislocations and processing-introduced defects that occur on single-crystal GaN substrates or single-crystal GaN films.
It is applicable to the defects specified in ISO 5618-1 from among the defects exposed on the surface of the following types of GaN substrates or films: single-crystal GaN substrate; single-crystal GaN film formed by homoepitaxial growth on a single-crystal GaN substrate; or single-crystal GaN film formed by heteroepitaxial growth on a single-crystal Al2O3, SiC, or Si substrate.
It is applicable to defects with an etch pit density of ≤ 7 × 107 cm-2.
Informaciones generales
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Estado: PublicadoFecha de publicación: 2024-04Etapa: Norma Internacional publicada [60.60]
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Edición: 1Número de páginas: 25
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Comité Técnico :ISO/TC 206ICS :81.060.30
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